feb.1999 mitsubishi transistor modules QM400HA-24 high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, dc motor controllers, nc equipment, welders QM400HA-24 ? i c collector current ........................ 400a ? v cex collector-emitter voltage ......... 1200v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 0.5 3?4 10 20.5 93 23.5 28 30.5 4 f 6.5 2?8 16.5 26 3 26 113 41.5 90 70 10 10 9 9 b e bx 9 ec 18 18 22 37 30 7 21.5 b c bx e e label
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m8 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 1200 1200 1200 7 400 400 3120 20 4000 C40~+150 C40~+125 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 870 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM400HA-24 high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1200v, v eb =2v v cb =1200v, emitter open v eb =7v i c =400a, i b =8a Ci c =400a (diode forward voltage) i c =400a, v ce =5v v cc =600v, i c =400a, i b1 =Ci b2 =8a transistor part diode part conductive grease applied typ. max. 8.0 8.0 600 3.0 3.5 1.8 3.0 18 3.0 0.04 0.175 0.02
feb.1999 ? 10 ? 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1.8 2.2 2.6 3.0 3.4 3.8 v ce =2.8v t j =25? 800 600 400 100 0 012345 t j =25? i b =2a 700 500 300 200 i b =8a i b =4a i b =0.5a i b =12a 7 5 4 3 2 3 10 5 4 3 1 10 23457 2 10 23457 3 10 v ce =5.0v t j =25? t j =125? 7 3 2 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 1 10 23457 2 10 23457 3 10 v ce(sat) v be(sat) t j =25? t j =125? i b =8a 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 i c =100a t j =25? t j =125? i c =400a i c =200a 1 10 7 5 4 3 2 1 10 23457 2 10 23457 3 10 0 10 7 5 4 3 3 2 t j =25? t j =125? t f t on t s v cc =600v i b1 =? b2 =8 a i c =300a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM400HA-24 high power switching use insulated type
feb.1999 ? 10 1 10 0 10 0 10 ? 10 ? 10 3 10 2 10 1 10 0 10 3 10 2 10 0 10 1 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 50 s 100 s 500 s dc 1m s 7 5 4 3 1 10 7 5 4 3 0 10 23457 1 10 23457 2 10 t j =25? t j =125? t s 7 0 10 7 2 3 t f v cc =600v i c =400a i b1 =8a 3 2 3 800 200 0 0 200 1600 600 400 600 800 1000 700 500 300 100 t j =125? i b2 =?6a i b2 =?a 400 1200 1400 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 7 5 3 2 7 5 3 2 7 5 3 2 0.05 0.04 0.03 0.01 0 444 23457 0.02 3 10 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM400HA-24 high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 ? 10 1 10 0 10 0 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 ? 10 0 10 1 10 2 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 4000 3500 3000 2500 2000 1500 1000 500 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 i rr t rr q rr v cc =600v i b1 =? b2 =8a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.20 0.16 0.12 0.08 0.04 0 444 23457 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM400HA-24 high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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